Facilities | Mukesh Kumar Research Group

Combinatorial sputtering technique used in thin-film deposition in which multiple target materials are simultaneously or sequentially sputtered to create compositionally graded films or novel material phases.
It is designed to support both RF (radio frequency) and DC (direct-current) sputtering.

Dual chamber sputtering system from Excel Instrument.
It is designed to support both RF (radio frequency) and DC (direct-current) sputtering, making it versatile for depositing a wide range of materials. DC sputtering is primarily used for conductive materials like metals, ensuring high deposition rates, while RF sputtering is essential for non-conductive or insulating materials like oxides, nitrides, and 2D materials.

Vacuum-based deposition system used to coat substrates with metal or organic materials by heating a source material until it evaporates and condenses onto the target surface.
It operates under high vacuum conditions to ensure high-purity and uniform film deposition. The system consists of a vacuum chamber, heating source (resistive filament or boat), and a substrate holder.
In our lab we mainly used it for fabricating electrical contacts, with high-quality and controlled thickness.

This furnace is a high-temperature laboratory equipment used for material synthesis, annealing, and heat treatment.
It features dual-zone temperature control, with the digital display showing the set temperatures for precise heating regulation.

The CVD system features a three-zone insulating design, each controlled by individual PID temperature controllers for precise thermal management.
A chiller connection helps regulate excess heat, ensuring stable operation.
Mass Flow Controllers (MFCs) enable precise gas flow control for optimized thin-film deposition.
The tube-in-tube configuration enhances thermal uniformity and minimizes contamination. This setup ensures efficient and controlled growth of high-quality thin films.

Three-zone tube in tube furnace can also function as a Low-Pressure Chemical Vapor Deposition system.
In LPCVD mode, the furnace maintains a low-pressure environment, improving the uniformity of thin-film deposition by enhancing gas diffusion and minimizing unwanted gas-phase reactions.
The three independent PID-controlled zones ensure precise temperature control across the reaction chamber, enabling optimized material growth.
The quartz tube serves as the reaction chamber, with MFCs (Mass Flow Controllers) regulating precursor gas flow, while a chiller system may assist in temperature stabilization.

A device replicates sunlight conditions for testing photovoltaic cells, photodetectors, and other solar energy applications.
The simulator provides a controlled light source with adjustable lamp intensity and constant power/attenuation modes to mimic the solar spectrum accurately.
It includes lamp cooling, lamp status indicators, and a shutter mechanism for precise control over light exposure. The lamp life monitor and over-temperature protection ensure safe operation.
This system is essential for evaluating the performance and efficiency of solar-energy-based devices under standardized illumination conditions.

This setup is used to analyze the optical properties of materials by measuring their absorbance and transmittance in the ultraviolet and visible light spectrum.
The setup includes a light source, a monochromator for directing the light, and a detector to capture the transmitted or reflected signal.
The ERA-SM ADVANCE unit likely serves as a data acquisition and control interface, while the motorized stage with micrometer adjustments enables precise sample positioning.
Using Tauc’s plot or similar methods, the system can estimate the optical band gap, a key parameter for semiconductor and optoelectronic applications.

This setup is used for measuring the electrical resistivity and sheet resistance of thin films and bulk materials.
The system consists of a Keithley 2450 Source Meter, which provides a precise current and measures the corresponding voltage, and a probe station, which contains four evenly spaced probes that make contact with the sample.
The four-probe method eliminates the effect of contact resistance by using separate probes for current injection and voltage measurement, leading to more accurate resistivity values.

A highly sensitive instrument designed for ultra-low current measurements and precision voltage sourcing.
It is commonly used in materials characterization, for measuring leakage currents, resistivity, and charge transport in highly resistive materials.
The remote preamp capability reduces noise and interference, making it ideal for sensitive applications such as dielectric testing, nanomaterial characterization, and photodetector performance analysis.
This instrument is crucial for experiments requiring extreme accuracy in detecting tiny electrical signals.

Hall Effect Measurement System offers an innovative solution on Van der Pauw and Hall Bar measurements. Its unique design allows users to measure the samples between 80K to 500K with ultimate resolution and accuracy. All magnet moves and temperature changes can be done automatically without changing any components.
ezHEMS enables data logging and plotting of a wide range of material properties; I-V curves, resistance, resistivity, sheet resistance, magnetoresistance, carrier concentration, Hall mobility, Hall coefficient as a function of temperature.

A high-precision instrument used for the electrical characterization of the semiconductor devices, materials, and electronic components.
It features an integrated touchscreen display and multiple USB ports for connectivity.
This instrument is used for IV, CV, IT and pulse measurements on transistors, memristors, diodes, photodetectors and other nanodevices.

Prof. Mukesh Kumar Research Group