IRIL
Welcome to the InfraRed (IR)/Thermal Wave Imaging (TWI) research group at Indian Institute of Technology Ropar's InfraRed Imaging Laboratory (IRIL) at Department of Electrical Engineering. Our goal is to advance the state-of-the- art in IR Technologies for non- destructive testing and non-invasive imaging applications through advanced scientific research.
Our primary efforts are focused around coded excited active IR/TWI techniques for Non-destructive Testing and Evaluation (NDT&E) of various materials. Coded excited IR/TWI techniques, involves exciting the specimen with predefined coded excited stimulus (frequency modulated, Barker, complementary Golay sequences etc..) followed by an appropriate post processing(preferably a correlation based matched filtering) on the captured infrared image sequence to compress the excitation energy to a very narrow duration pulse. These coded excitation schemes and the followed post processing techniques will greatly improve the test resolution and sensitivity without increasing the peak power of the excitation for finding out the subsurface anomalies hidden inside the test material in an optimum experimentation time. Our research group is working simultaneously to understand the different coded excitation schemes with suitable experimental procedures followed by the development of algorithms which will improve pulse compression properties to enhance the test sensitivity and resolution.
We are actively partnering with various government agencies and some of the internationally repute research groups all over the globe in the field of infrared/thermal wave imaging to assist in the development and deployment of coded excited thermal wave imaging techniques for non-destructive testing and evaluation applications. If you are interested in this technology, please contact Dr. Ravibabu Mulaveesala for more information.
Direct wafer bonding between a plane oxidized Si wafer and an oxidized silicon wafer having the square-shaped cavities.
Thermal Image of the bonded |
Thermal Image of the bonded |
wafer after annealing at 400 C |
wafer after annealing at 1100 C |
Dr. Ravibabu Mulaveesala, InfraRed Imaging Laboratory (IRIL), Department of Electrical Engineering , Indian Institute of Technology Ropar, Nangal Road, Rupnagar,
Punjab, INDIA 140001, TEL: +91 1881 242118 FAX: +91 1881 223395 EMAIL: ravi@iitrpr.ac.in WEB: http://www.iitrpr.ac.in/ee/ravi