Dr. Brajesh Rawat

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Name: 
Dr. Brajesh Rawat
Designation: 
Assistant Professor
Department: 
Department of Electrical Engineering
Email: 

r.brajesh@iitrpr.ac.in
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Biography: 
Dr. Brajesh Rawat is an Assistant Professor in the Department Electrical Engineering, Indian Institute of Technology Ropar, Rupnagar, Punjab, India. He received his B.E. (Bachelor of Engineering) degree from Rajiv Gandhi Proudyogiki Vishwavidyalaya Bhopal, Madhya Pradesh, India in the field of Electronics and Communication in 2009, and Ph.D. degree from Indian Institute of Technology Guwahati, Assam, India in 2017. For his Ph.D. dissertation, he worked on the modeling of 2-D material-based field-effect transistors. After his PhD, he worked approximately 7 months as a Senior Research Fellow in Centre for Excellence on Nanoelectronics & Theranostic Devices (CENTD) Lab, IIT Guwahati, India.
Areas of Research: 
Nanoscale Devices Modeling and Simulation
2-D Material based Devices Simulation and Fabrication
Simulation and Fabrication of Biosensors
Education: 
PhD, Electronics & Electrical Engineering, Indian Institute of Technology Guwahati, India, 2017
BE, Electrical Engineering, Rajiv Gandhi Proudyogiki Vishwavidyalaya Bhopal, Madhya Pradesh, India, 2009
Work Experience: 
Assistant Professor, Indian Institute of Technology Ropar, June. 2018-Present.
Senior Research Fellow, CENTD at Indian Institute of Technology Guwahati, August 2017- May. 2018
Lecturer, Sagar Institute of Research & Technology Bhopal, Madhya Pradesh, India July 2009 - June 2011
Selected Publications/Patents: 
1. Brajesh Rawat, Vinaya M M, and Roy Paily, “Transition-Metal-dichalcogenide based FieldEffect Transistor for Mixed-Signal Applications ", under review in IEEE Transactions on Electron Devices, 2018
2. Brajesh Rawat, and Roy Paily, “Modeling of Graphene-based Field-Effect Transistor through 1-D Real-Space Approach," Journal of Computational Electronics, ISSN 1572-8137, Vol. 17, no. 1, pp. 90-100 March- 2018.
3. Brajesh Rawat, and Roy Paily, “Performance Evaluation of Bilayer Graphene Nanoriibon Tunnel FETs for Digital and Analog applications " IEEE Transactions on Nanotechnology, Vol. 16, no. 3, pp. 411-416 May- 2017.
4. Brajesh Rawat, and Roy Paily, “Performance Projection of Bilayer Graphene Nanoribbon FET through Quantum-Mechanical Simulation," Semiconductor Science and Technology, Vol. 32, no. 12, pp. 125004-125012 December- 2016
5. Brajesh Rawat, and Roy Paily, “Analysis of graphene Tunnel Field-Effect Transistors for Analog/RF Applications," IEEE Transactions on Electron Devices, Vol. 62, no. 8, pp. 2663-2669, August- 2015.
6. Brajesh Rawat, and Roy Paily, “Two-Dimensional Material based Field-Effect Transistors for THz Electronics," 5th International Conference on Advanced Nanomaterials and Nanotechnology, IIT Guwahati, India, Dec-2017 .
7. Brajesh Rawat, and Roy Paily, “Modeling of Graphene and Graphene Nanoribbon Field-Effect Transistors with a Single 1-D Hamiltonian Matrix," 18th International Workshop on Physics of Semiconductor Devices (IWPSD), pp-366, IISc Bangalore, India, Dec-2015.
8. Brajesh Rawat, and Roy Paily, “Analysis of Quasi-saturation behavior and Negative Differential Resistance in Graphene FETs," 2nd International Conference on Emerging Electronics (ICEE), IISc Bangalore, India, Dec 2014.